To the issue of melting zone height control in the technology of electron-emitting crucible-less zone melting of silicon

V. A. Porev; G. V. Porev

To the issue of melting zone height control in the technology of electron-emitting crucible-less zone melting of silicon

Автор(и)

V. A. Porev
G. V. Porev

Ключові слова:

electron-emitting melting, melting of silicon, melting zone.

Анотація

The new approach to the evaluation of the height of the melting zone during the crucible-less zoned melting process of
silicon is substantiated. This new approach takes into account the experimentally established specifics of the brightness field
formation.

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pdf (English)

Опубліковано

2015-12-11

Як цитувати

Porev, V. A., & Porev, G. V. (2015). To the issue of melting zone height control in the technology of electron-emitting crucible-less zone melting of silicon. JOURNAL OF HYDROCARBON POWER ENGINEERING, 2(2), 58–62. вилучено із https://ogpe.nung.edu.ua/index.php/jhpe/article/view/37